Skip to Main Content

Part of the TTI Family of SpecialistsContact Mouser (UK) +44 (0) 1494-427500Feedback

Change LocationEnglish

+44 (0) 1494-427500 Change Location

In Stock

RoHS

Incoterms:DDU
Duty, customs fees and taxes are collected at time of delivery.

Please confirm your currency selection:

US Dollars
Free shipping on most orders over $230 (USD).
All major credit cards accepted

Euros
Free shipping on most orders over 200 € (EUR).
All major credit cards accepted

South African Rand
Free shipping on most orders over R3 800 (ZAR).
American Express not accepted as a method of payment

British Pounds
Free shipping on most orders over £170 (GBP).
All major credit cards accepted

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

SCTW35N65G2VAG

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-SCTW35N65G2VAG

Mfr. No:

SCTW35N65G2VAG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 2

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTW35N65G2VAG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Unit Weight:	4.500 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCTW35N65G2VAG Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

Automotive-Grade Silicon Carbide Power MOSFETs

Developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology.

650V 3rd Gen SiC MOSFETs

Features low R_DS(on) per area, even at high temperatures, and excellent switching performance.

Silicon Carbide Power MOSFETs

Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.

HB/HB2 Series Insulated-Gate Bipolar Transistors

Combine a very low saturation voltage with a minimal collector current turn-off tail.

Supplier Image

View All Newest Products from STMicroelectronics

In Stock: 198

Stock:: 198 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 198 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.97	$11.97
	$10.04	$100.40
	$9.25	$925.00
	$8.80	$10,560.00
3,000	Quote