AS4C32M8SA-7TCN

Alliance Memory
913-AS4C32M8SA7TCN
AS4C32M8SA-7TCN

Mfr.:

Description:
DRAM SDRAM, 256M, 32M X 8, 3.3V, 54PIN TSOP II, 143 MHZ, COMMERCIAL TEMP - Tray

ECAD Model:
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In Stock: 9,932

Stock:
9,932 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$5.90 $5.90
$5.50 $55.00
$5.33 $133.25
$5.21 $260.50
$3.59 $387.72
$3.52 $760.32
$3.50 $1,890.00
$3.48 $3,758.40
$3.26 $8,449.92

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
8 bit
143 MHz
TSOP-II-54
32 M x 8
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C32M8SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
Unit Weight: 2.171 g
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Attributes selected: 0

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320299
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.