ADPA1116ACGZN-R7

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Mouser No:

584-ADPA1116ACGZN-R7

Mfr. No:

ADPA1116ACGZN-R7

Mfr.:

Analog Devices

Description:

RF Amplifier GaN Wideband Power Amplifier ICs

Lifecycle:

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Datasheet:

ADPA1116ACGZN-R7 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Analog Devices Inc.
Product Category:	RF Amplifier
Delivery Restriction:	Mouser does not presently sell this product in your region.
Operating Frequency:	300 MHz to 6 GHz
Operating Supply Voltage:	28 V
Gain:	32.5 dB
Type:	Power Amplifiers
Mounting Style:	SMD/SMT
Package/Case:	LFCSP-32
Technology:	GaN
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	ADPA1116
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Analog Devices
Development Kit:	EVAL-ADPA1116
Number of Channels:	1 Channel
Pd - Power Dissipation:	28.7 W
Product Type:	RF Amplifier
Factory Pack Quantity:	500
Subcategory:	Wireless & RF Integrated Circuits
Part # Aliases:	ADPA1116ACGZN

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Datasheet

ADPA1116ACGZN-R7 Datasheet

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Compliance Codes

CAHTS:: 8542330000
USHTS:: 8542330001
MXHTS:: 8542330299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

ADPA1116 GaN Power Amplifiers

Analog Devices ADPA1116 GaN Power Amplifiers feature a 39.5dBm saturated output power (P_OUT) power added efficiency (PAE) of 40% and a power gain of 23.5dB typical from 0.5GHz to 5GHz at an input power (P_IN) of 16.0dBm. The RF input and output are internally matched and AC-coupled. A drain bias voltage of 28V is applied to the V_DD1 and V_DD2 pins, which have integrated bias inductors. The drain current is set using a negative voltage to the V_GG1 pin. The ADPA1116 is manufactured using a gallium nitride (GaN) process and is available in a 32-lead chip scale package. The ADI ADPA1116 amps are specified for operation from -40°C to +85°C.