EPC2110

65-EPC2110
EPC2110

Mfr.:

Description:
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
18 Weeks Estimated factory production time.
Minimum: 12500   Multiples: 2500
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
$1.04 $13,000.00

Product Attribute Attribute Value Select Attribute
EPC
Product Category: GaN FETs
RoHS:  
SMD/SMT
BGA
N - Channel
2 Channel
120 V
3.4 A
110 mOhms
6 V, - 4 V
2.5 V
0.8 nC
- 40 C
+ 150 C
Enhancement
eGaN FET
Brand: EPC
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Packaging: Reel
Product: Power Transistor
Product Type: GaN FETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Transistor Type: 2 N-Channel
Unit Weight: 3 mg
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Attributes selected: 0

Datasheet

USHTS:
8541290040

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