IXBT14N300HV

Name: IXYS IXBT14N300HV
Brand: IXYS
SKU: 576-IXBT14N300HV
Price: 60.08 USD
Availability: OutOfStock

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Mouser No:

576-IXBT14N300HV

Mfr. No:

IXBT14N300HV

Mfr.:

IXYS

Description:

IGBTs IGBT BIMSFT-VERY HIV OLT

Datasheet:

IXBT14N300HV Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3 kV
Collector-Emitter Saturation Voltage:	2.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	38 A
Pd - Power Dissipation:	200 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Moisture Sensitive:	Yes
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Tradename:	BIMOSFET

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Datasheet

IXBT14N300HV Datasheet

PCN

Product Change Notification (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs

IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of the IXBx14N300HV BiMOSFET IGBTs serve as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.