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IXFH10N100

IXYS

Images are for reference only
See Product Specifications

Mouser No:

747-IXFH10N100

Mfr. No:

IXFH10N100

Mfr.:

IXYS

Description:

MOSFETs 1KV 10A

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IXFH10N100 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	1.2 Ohms
Vgs - Gate-Source Voltage:	20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Tradename:	HyperFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	32 ns
Forward Transconductance - Min:	10 S
Peak Solder Temperature:	+ 300 C
Pin Count:	3
Product Type:	MOSFETs
Rise Time:	33 ns
Series:	HiPerFET
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	62 ns
Typical Turn-On Delay Time:	21 ns
Unit Weight:	6 g

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Datasheet

IXFH10N100 Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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IXFH46N65X2W Power MOSFET

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IXFH34N65X2W Power MOSFET

650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

Availability

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$17.25	$17.25
	$13.13	$131.30
	$10.93	$1,311.60
	$9.75	$4,972.50
	$9.25	$9,435.00