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IXTA10N60P

Name: IXYS IXTA10N60P
Brand: IXYS
SKU: 747-IXTA10N60P
Price: 3.12 USD
Availability: InStock

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Mouser No:

747-IXTA10N60P

Mfr. No:

IXTA10N60P

Mfr.:

IXYS

Description:

MOSFETs 10.0 Amps 600 V 0.74 Ohm Rds

Datasheet:

IXTA10N60P Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	740 mOhms
Vgs - Gate-Source Voltage:	30 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	21 ns
Forward Transconductance - Min:	11 S
Peak Solder Temperature:	+ 300 C
Pin Count:	3
Product Type:	MOSFETs
Rise Time:	27 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	4 g

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Datasheet

IXTA10N60P Datasheet

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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