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IXTH36P10

IXYS

Images are for reference only
See Product Specifications

Mouser No:

747-IXTH36P10

Mfr. No:

IXTH36P10

Mfr.:

IXYS

Description:

MOSFETs -36 Amps -100V 0.075 Rds

Datasheet:

IXTH36P10 Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	75 mOhms
Vgs - Gate-Source Voltage:	20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	180 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	28 ns
Product Type:	MOSFETs
Rise Time:	37 ns
Series:	IXTH36P10
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	35 ns
Unit Weight:	6 g

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Datasheet

IXTH36P10 Datasheet

PCN

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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IXFH46N65X2W Power MOSFET

650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXFH34N65X2W Power MOSFET

650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: Request Delivery Quote

Enter Quantity:

Minimum: 30 Multiples: 30

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.15	$124.50
	$3.05	$366.00
	$2.71	$1,382.10
	$2.40	$2,448.00