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RoHS

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IXTQ30N50L2

Name: IXYS IXTQ30N50L2
Brand: IXYS
SKU: 747-IXTQ30N50L2
Price: 10.42 USD
Availability: InStock

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Mouser No:

747-IXTQ30N50L2

Mfr. No:

IXTQ30N50L2

Mfr.:

IXYS

Description:

MOSFETs LINEAR L2 SERIES MOSFET 500V 30A

Datasheet:

IXTQ30N50L2 Datasheet

ECAD Model:

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Learn more about IXYS IXTQ30N50L2

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.42	$3,126.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	200 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	240 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	400 W
Channel Mode:	Enhancement
Tradename:	Linear L2
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	40 ns
Forward Transconductance - Min:	9 S
Product Type:	MOSFETs
Rise Time:	117 ns
Series:	IXTQ30N50
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	35 ns
Unit Weight:	1.600 g

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Datasheet

IXTQ30N50L2 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

Linear Power MOSFETs with Extended FBSOA

IXYS Linear Power MOSFETs with Extended FBSOA are N-Channel enhancement mode power MOSFETs designed for linear operation in an international standard package. IXYS Linear Power MOSFETs with Extended FBSOA feature a miniBLOC with aluminium nitride isolation, high power density, a space-saving and easy-to-mount package, and molding epoxy which meets the UL94 V-0 flammability classification.