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IXYA30N120A4HV

Name: IXYS IXYA30N120A4HV
Brand: IXYS
SKU: 747-IXYA30N120A4HV
Price: 8.87 USD
Availability: InStock

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Mouser No:

747-IXYA30N120A4HV

Mfr. No:

IXYA30N120A4HV

Mfr.:

IXYS

Description:

IGBTs TO263 1200V 30A XPT

Datasheet:

IXYA30N120A4HV Datasheet

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In Stock: 712

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.87	$8.87
	$6.47	$64.70
	$4.76	$476.00
	$4.66	$4,660.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-263HV-3
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.9 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	106 A
Pd - Power Dissipation:	500 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	106 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	XPT
Unit Weight:	2.500 g

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Datasheet

IXYA30N120A4HV Datasheet

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

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AC/DC Power Supply

Littelfuse AC/DC Power Supply is a commonly used building block in electronic designs. The components in these power supply building blocks need to be reliable and long-lasting, and Littelfuse offers a range of products that fit those requirements. This portfolio of components covers overcurrent and overvoltage protection, the power stage, and output protection. Typical applications for Littelfuse AC/DC Power Supply products include automotive, solar, industrial, manufacturing, and more.

Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.