AIMDQ75R033M2HXTMA1

Infineon Technologies
726-AIMDQ75R033M2HXT
AIMDQ75R033M2HXTMA1

Mfr.:

Description:
SiC MOSFETs CoolSiC Automotive Power Device 750 V G2

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 28

Stock:
28
Can Dispatch Immediately
On Order:
750
Expected 2026/03/26
Factory Lead Time:
53
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$11.01 $11.01
$8.61 $86.10
$7.18 $718.00
$6.40 $3,200.00
Full Reel (Order in multiples of 750)
$5.44 $4,080.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
HD-SOP-22
N-Channel
1 Channel
750 V
53 A
65.6 mOhms
- 7 V, 23 V
5.6 V
37 nC
- 55 C
+ 175 C
217 W
Enhancement
CoolSiC
Brand: Infineon Technologies
Configuration: Single
Fall Time: 6 ns
Packaging: Reel
Packaging: Cut Tape
Product: SiC MOSFET
Product Type: SiC MOSFETS
Rise Time: 8 ns
Series: CoolSiC G2
Factory Pack Quantity: 750
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 9 ns
Part # Aliases: AIMDQ75R033M2H SP006089220
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolSiC™ Automotive 750V G2 MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.