AIMW120R060M1HXKSA1

Infineon Technologies
726-W120R060M1HXKSA1
AIMW120R060M1HXKSA1

Mfr.:

Description:
SiC MOSFETs SIC_DISCRETE

ECAD Model:
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In Stock: 799

Stock:
799 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$24.33 $24.33
$18.53 $185.30

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
36 A
60 mOhms
- 7 V, + 23 V
5.7 V
31 nC
- 55 C
+ 175 C
150 mW
Enhancement
CoolSiC
Brand: Infineon Technologies
Packaging: Tube
Product Type: SiC MOSFETS
Series: CoolSiC 1200V
Factory Pack Quantity: 240
Subcategory: Transistors
Technology: SiC
Part # Aliases: AIMW120R060M1H SP005417583
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CNHTS:
8541210000
USHTS:
8541210095
ECCN:
EAR99

CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an RDS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.