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FF900R12ME7WB11BPSA1

Name: Infineon FF900R12ME7WB11BPSA1
Brand: Infineon Technologies
SKU: 726-FF900R12ME7WB11B
Price: 221.55 USD
Availability: InStock

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Mouser No:

726-FF900R12ME7WB11B

Mfr. No:

FF900R12ME7WB11BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 900 A dual IGBT module

Datasheet:

FF900R12ME7WB11BPSA1 Datasheet (PDF)

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In Stock: 6

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Qty.	Unit Price	Ext. Price
	$221.55	$221.55

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.5 V
Continuous Collector Current at 25 C:	890 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Factory Pack Quantity:	6
Subcategory:	IGBTs
Technology:	Si
Tradename:	EconoDUAL
Part # Aliases:	FF900R12ME7W_B11 SP005589481

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Datasheet

FF900R12ME7WB11BPSA1 Datasheet (PDF)

CNHTS:: 8504409100
USHTS:: 8541290055
TARIC:: 8541290000
ECCN:: EAR99

1200V Dual IGBT Modules

Infineon 1200V, Dual IGBT Modules, are EconoDUAL™ 3 1200V, 900A dual TRENCHSTOP™ IGBT7 Modules with emitter-controlled 7 diodes, NTC, and PressFIT contact technology. The IGBT Modules offer a higher inverter output current for the same frame size and avoidance of paralleling. The Infineon 1200V, Dual IGBT Modules, provide an easy and reliable assembly with high inter-connection reliability.

IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.