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IPWS65R035CFD7AXKSA1

Name: Infineon IPWS65R035CFD7AXKSA1
Brand: Infineon Technologies
SKU: 726-IPWS65R035CFD7AX
Price: 7.97 USD
Availability: OutOfStock

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Mouser No:

726-IPWS65R035CFD7AX

Mfr. No:

IPWS65R035CFD7AXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_COOLMOS

Datasheet:

IPWS65R035CFD7AXKSA1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	145 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	305 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Product Type:	MOSFETs
Series:	CoolMOS CFD7A
Factory Pack Quantity:	240
Subcategory:	Transistors
Part # Aliases:	IPWS65R035CFD7A SP005405804

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Datasheet

IPWS65R035CFD7AXKSA1 Datasheet (PDF)

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.