IR2233SPbF

Infineon Technologies
942-IR2233SPBF
IR2233SPbF

Mfr.:

Description:
Gate Drivers 1200V 3-Phase,0.5A OCP, OPAMP, FAULT,SD

Datasheet:
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Learn more about Infineon Technologies IR2233SPbF

In Stock: 2,815

Stock:
2,815 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2815 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$6.41 $6.41
$4.95 $49.50
$4.59 $114.75
$4.20 $420.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
Half-Bridge
SMD/SMT
SOIC-28
6 Driver
6 Output
500 mA
10 V
20 V
90 ns
40 ns
- 40 C
+ 125 C
IR223X
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Features: Independent
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 700 ns
Maximum Turn-On Delay Time: 750 ns
Moisture Sensitive: Yes
Operating Supply Current: 4 mA
Pd - Power Dissipation: 1.6 W
Product Type: Gate Drivers
Propagation Delay - Max: 1 us
Shutdown: Shutdown
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 2.215 g
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CNHTS:
8542399000
CAHTS:
8542310000
USHTS:
8542310075
KRHTS:
8542311000
TARIC:
8542319000
MXHTS:
8542310302
ECCN:
EAR99

IR2133/IR2135/IR2233/IR2235 Gate Driver ICs

Infineon Technologies IR2133/IR2135/IR2233/IR2235 Gate Driver ICs feature three independent high-side and low-side referenced output channels for 3-phase applications. The Gate Driver ICs have a proprietary HVIC technology that enables ruggedized monolithic construction. The IR2133/IR2135/IR2233/IR2235 ICs have logic inputs compatible with CMOS or LSTTL outputs down to 2.5V logic. Additionally, the devices provide an independent operational amplifier. This amplifier permits analog feedback of bridge current via an external current sense resistor.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

IR2233/IR2235 MOSFET & IGBT Drives

Infineon Technologies IR2233/IR2235 MOSFET and IGBT Drives feature three independent high- and low-side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs down to 2.5V logic. An independent operational amplifier provides analog feedback of bridge current via an external current sense resistor.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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