CGH40120F

MACOM
941-CGH40120F
CGH40120F

Mfr.:

Description:
GaN FETs GaN HEMT DC-2.5GHz, 120 Watt

Datasheet:
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Learn more about MACOM CGH40120F

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440193
N-Channel
120 V
12 A
- 3 V
- 40 C
+ 150 C
2.5 GHz
1 GHz
GaN
Brand: MACOM
Configuration: Single
Development Kit: CGH40120F-TB
Gain: 19 dB
Output Power: 120 W
Packaging: Tray
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 25
Subcategory: Transistors
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 30.467 g
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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

In Stock: 276

Stock:
276
Can Dispatch Immediately
On Order:
225
Expected 2027/02/19
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$531.41 $531.41
$452.91 $4,529.10
$431.01 $10,775.25

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