NPT1012B

Name: MACOM NPT1012B
Brand: MACOM
SKU: 937-NPT1012B
Price: 227.27 USD
Availability: InStock

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See Product Specifications

Mouser No:

937-NPT1012B

Mfr. No:

NPT1012B

Mfr.:

MACOM

Description:

GaN FETs DC-4.0GHz P1dB 43dBm Gain 13dB GaN

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

NPT1012B Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
RoHS:
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	4 mA
Rds On - Drain-Source Resistance:	440 mOhms
Vgs th - Gate-Source Threshold Voltage:	- 1.8 V
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	44 W
Maximum Operating Frequency:	4 GHz
Technology:	GaN
Brand:	MACOM
Configuration:	Single
Gain:	13 dB
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	3 V
Unit Weight:	220 mg

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Compliance Codes

CNHTS:: 8504409190
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

NPTx Series GaN Wideband Transistor

MACOM NPTx Series GaN Wideband Transistor is a wideband transistor optimized for DC-2GHz operation. This transistor supports CW, pulsed, and linear operations with output power levels of 100W (50dBm) in an industry-standard plastic package. The NPTx transistors are ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications, and VHF/UHF/L/S-band radar.