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MSC015SMA070S

Name: Microchip MSC015SMA070S
Brand: Microchip Technology
SKU: 494-MSC015SMA070S
Price: 18.78 USD
Availability: OutOfStock

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Mouser No:

494-MSC015SMA070S

Mfr. No:

MSC015SMA070S

Mfr.:

Microchip Technology

Description:

SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-268

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Datasheet:

MSC015SMA070S Datasheet (PDF)

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Learn more about Microchip Technology MSC015SMA070S

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D3PAK-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	112 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	215 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	477 W
Channel Mode:	Enhancement
Brand:	Microchip Technology
Configuration:	Single
Fall Time:	20 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	34 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	53 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	6.200 g

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.