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MSCSM120AM16CT1AG

Microchip Technology

Images are for reference only
See Product Specifications

Mouser No:

494-120AM16CT1AG

Mfr. No:

MSCSM120AM16CT1AG

Mfr.:

Microchip Technology

Description:

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F

View in Development Tools Selector

Datasheet:

MSCSM120AM16CT1AG Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	MOSFET / SiC SBD
Technology:	SiC
Vf - Forward Voltage:	1.5 V
Vr - Reverse Voltage:	1.2 kV
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Mounting Style:	Screw Mount
Package/Case:	SP1F
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Bulk
Brand:	Microchip Technology
Fall Time:	25 ns
Id - Continuous Drain Current:	173 A
Pd - Power Dissipation:	745 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	16 mOhms
Rise Time:	30 ns
Factory Pack Quantity:	1
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	1.8 V

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Datasheet

MSCSM120AM16CT1AG Datasheet (PDF)

DTS

View in Development Tools Selector

Errata

PCN

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Compliance Codes

USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

MICROCHIP

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Feature Si₃N₄ substrate with thick copper for improved thermal performance.

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Silicon Carbide Power Modules featuring an extremely low inductance SP6LI package.

Silicon Carbide (SiC) Power Modules

Optimized for reliability, efficiency, low cost, space-saving, and reduced assembly time.

Silicon Carbide (SiC) Semiconductors

Offers a small footprint, high thermal conductivity, and zero reverse recovery charge.

Silicon Carbide (SiC) Schottky Barrier Diodes

Zero forward and reverse recovery charge for improved system efficiency.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$200.27	$200.27
	$199.27	$1,992.70
	$197.94	$4,948.50
100	Quote