SCT027W65G3-4AG

STMicroelectronics
511-SCT027W65G3-4AG
SCT027W65G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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In Stock: 353

Stock:
353 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$12.91 $12.91
$9.65 $96.50
$8.34 $834.00
$6.71 $4,026.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-4
N-Channel
1 Channel
650 V
60 A
29 mOhms
- 18 V, + 18 V
4.2 V
51 nC
- 55 C
+ 200 C
313 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 17 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 8 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

Datasheet

PCN

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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