It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SGT080R70ILB

Name: STMicroelectronics SGT080R70ILB
Brand: STMicroelectronics
SKU: 511-SGT080R70ILB
Price: 4.98 USD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

511-SGT080R70ILB

Mfr. No:

SGT080R70ILB

Mfr.:

STMicroelectronics

Description:

GaN FETs 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SGT080R70ILB Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics SGT080R70ILB

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 1,000

Expected 2026/06/08

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.98	$4.98
	$3.50	$35.00
	$3.02	$302.00
	$2.93	$1,465.00
	$2.85	$2,850.00
Full Reel (Order in multiples of 3000)
	$2.76	$8,280.00
24,000	Quote

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-8
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	4 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	FET
Product Type:	GaN FETs
Rise Time:	4 ns
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN
Type:	PowerGaN Transistor
Typical Turn-Off Delay Time:	5 ns
Typical Turn-On Delay Time:	3 ns
Unit Weight:	154 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SGT080R70ILB Datasheet (PDF)

PCN

Product Change Notification 2025-11-26 (PDF)

This functionality requires JavaScript to be enabled.

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SGT080R70ILB E-Mode PowerGaN Transistor

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor is an enhancement-mode transistor designed for high-efficiency power conversion applications. Featuring a drain-source voltage rating of 700V and a typical on-resistance of just 80mΩ, the STMicroelectronics SGT080R70ILB leverages the superior switching performance of Gallium Nitride (GaN) technology to minimize conduction and switching losses. Housed in a compact PowerFLAT 8x8 HV package, the transistor supports high-frequency operation and is ideal for use in resonant converters, power factor correction (PFC) stages, and DC-DC converters. A low gate charge and output capacitance enable faster transitions and reduced energy dissipation, making the SGT080R70ILB well-suited for demanding applications in consumer electronics, industrial systems, and data centers.