STGD4M65DF2

STMicroelectronics
511-STGD4M65DF2
STGD4M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 2,128

Stock:
2,128 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$1.52 $1.52
$0.958 $9.58
$0.636 $63.60
$0.502 $251.00
$0.454 $454.00
Full Reel (Order in multiples of 2500)
$0.384 $960.00
$0.368 $1,840.00
$0.363 $3,630.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGD4M65DF2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 2500
Subcategory: IGBTs
Unit Weight: 330 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.