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STGF10M65DF2

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STGF10M65DF2

Mfr. No:

STGF10M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

Complete Your Design

Datasheet:

STGF10M65DF2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220FP-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	20 A
Pd - Power Dissipation:	30 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGF10M65DF2
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	20 A
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Filter Document:

Datasheet

STGF10M65DF2 Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 2000 Multiples: 1000

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$0.508	$1,016.00
	$0.505	$2,525.00