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STGF20H65DFB2

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STGF20H65DFB2

Mfr. No:

STGF20H65DFB2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP pack

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STGF20H65DFB2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGF20H65DFB2

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	45 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	1.690 g

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Filter Document:

Datasheet

STGF20H65DFB2 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-6-20 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 873

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.54	$2.54
	$1.26	$12.60
	$1.12	$112.00
	$0.893	$446.50
	$0.869	$869.00
	$0.833	$1,666.00
	$0.784	$3,920.00
	$0.783	$7,830.00