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STGW10M65DF2

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STGW10M65DF2

Mfr. No:

STGW10M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STGW10M65DF2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGW10M65DF2

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	20 A
Pd - Power Dissipation:	115 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGW10M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	20 A
Gate-Emitter Leakage Current:	250 uA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6 g

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Filter Document:

Datasheet

STGW10M65DF2 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-6-20 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 979

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.90	$2.90
	$1.86	$18.60
	$1.27	$127.00
	$1.08	$648.00
	$0.915	$1,098.00
	$0.878	$2,634.00
	$0.852	$4,600.80