STGWT60H65DFB

STMicroelectronics
511-STGWT60H65DFB
STGWT60H65DFB

Mfr.:

Description:
IGBTs 650V 60A HSpd trench gate field-stop IGBT
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
80 A
375 W
- 55 C
+ 175 C
STGWT60H65DFB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6.756 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

In Stock: 28

Stock:
28
Can Dispatch Immediately
On Order:
600
Expected 2026/10/30
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$5.05 $5.05
$2.83 $28.30
$2.71 $271.00
$2.27 $1,362.00
$2.00 $2,400.00

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