Skip to Main Content

Part of the TTI Family of SpecialistsContact Mouser (UK) +44 (0) 1494-427500Feedback

Change LocationEnglish

+44 (0) 1494-427500 Change Location

In Stock

RoHS

Incoterms:DDU
Duty, customs fees and taxes are collected at time of delivery.

Please confirm your currency selection:

US Dollars
Free shipping on most orders over $230 (USD).
All major credit cards accepted

Euros
Free shipping on most orders over 200 € (EUR).
All major credit cards accepted

South African Rand
Free shipping on most orders over R3 800 (ZAR).
American Express not accepted as a method of payment

British Pounds
Free shipping on most orders over £170 (GBP).
All major credit cards accepted

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

STP15N60M2-EP

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STP15N60M2-EP

Mfr. No:

STP15N60M2-EP

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STP15N60M2-EP Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	11 A
Rds On - Drain-Source Resistance:	378 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	STP15N60M2-EP
Factory Pack Quantity:	1000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP15N60M2-EP Datasheet (PDF)

EOL

Product Discontinuation Notification 2026-8-25 (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

STH4N150-2AG N-Channel Power MOSFET

Designed to ensure a high level of voltage and robustness for the automotive applications.

STL059N4S8AG Power MOSFET

A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

N-Channel MDmesh K6 Power MOSFETs

800V, Zener-protected, 100% avalanche tested, and ideal for flyback converters and LED lighting.

STripFET F8 N-Channel Power MOSFETs

AEC-Q101 qualified and offers a comprehensive package solution from 30V to 150V.

STP80N1K1K6 N-Channel Power MOSFET

Uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology.

Availability

Stock:: Non-Stocked, Call To Request a Quote

An unexpected error occurred. Please try again later.