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STP35N60M2-EP

STMicroelectronics

Images are for reference only
See Product Specifications

Mouser No:

511-STP35N60M2-EP

Mfr. No:

STP35N60M2-EP

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.110 Ohm typ 26 A MDmesh M2 Power MOSFET in TO-220 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STP35N60M2-EP Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	41 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	STP35N60M2-EP
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	2 g

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Filter Document:

Datasheet

STP35N60M2-EP Datasheet (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 38

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.08	$7.08
	$4.75	$47.50
	$3.81	$381.00
	$3.40	$1,700.00
	$2.99	$2,990.00