STU6N95K5

STMicroelectronics
511-STU6N95K5
STU6N95K5

Mfr.:

Description:
MOSFETs N-Ch 950V 1Ohm 9A pwr MDmesh K5
Complete Your Design

Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-251-3
N-Channel
1 Channel
950 V
9 A
1.25 Ohms
30 V
4 V
13 nC
- 55 C
+ 150 C
90 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 21 ns
Product Type: MOSFETs
Rise Time: 12 ns
Series: STU6N95K5
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 33 nS
Typical Turn-On Delay Time: 12 ns
Unit Weight: 340 mg
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
5,498
Expected 2027/04/23
Factory Lead Time:
36
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.95 $3.95
$1.88 $18.80
$1.67 $835.00
$1.65 $1,650.00
$1.55 $4,650.00

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