STW18N60M2

STMicroelectronics
511-STW18N60M2
STW18N60M2

Mfr.:

Description:
MOSFETs N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-247 package
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
600 V
13 A
280 mOhms
25 V
2 V
21.5 nC
- 55 C
+ 150 C
110 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10.6 ns
Product Type: MOSFETs
Rise Time: 9 ns
Series: STW18N60M2
Factory Pack Quantity: 600
Subcategory: Transistors
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 6 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

In Stock: 250

Stock:
250 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.93 $3.93
$1.94 $19.40
$1.76 $176.00
$1.47 $882.00
$1.43 $4,290.00
$1.40 $7,560.00

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