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RoHS

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STW75N60M6-4

Name: STMicroelectronics STW75N60M6-4
Brand: STMicroelectronics
SKU: 511-STW75N60M6-4
Price: 11.11 USD
Availability: OutOfStock

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Mouser No:

511-STW75N60M6-4

Mfr. No:

STW75N60M6-4

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package

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Datasheet:

STW75N60M6-4 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Minimum: 600 Multiples: 600

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.11	$11.11
	$7.76	$77.60
	$5.83	$583.00
	$5.44	$3,264.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	36 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	106 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	446 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	Mdmesh M6
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N Channel
Unit Weight:	6 g

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Datasheet

STW75N60M6-4 Datasheet (PDF)

PCN

Product Change Notification 2024-10-15 (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

600V MDmesh™ DM6 Super-junction MOSFETs

STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q_g), very low recovery charge (Q_rr), low recovery time (t_rr), and an excellent R_DS(on) per area.