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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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DKR400AB60

Name: SanRex DKR400AB60
Brand: SanRex
SKU: 197-DKR400AB60
Price: 48.26 USD
Availability: InStock

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Mouser No:

197-DKR400AB60

Mfr. No:

DKR400AB60

Mfr.:

SanRex

Description:

Diode Modules Discrete Semiconductor Modules 600V 400A

Datasheet:

DKR400AB60 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SanRex DKR400AB60

In Stock: 77

Stock:: 77

Can Dispatch Immediately

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On Order:: 160

Expected 2026/09/08
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$48.26	$48.26
	$36.40	$364.00
	$35.49	$3,549.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SanRex
Product Category:	Diode Modules
RoHS:
Mounting Style:	Screw Mount
Vr - Reverse Voltage:	600 V
Type:	Non-Isolated
Configuration:	Dual-Common Cathode
Vf - Forward Voltage:	1.4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	DKR
Packaging:	Tray
Brand:	SanRex
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Product Type:	Diode Modules
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Technology:	Si
Tradename:	SanRex
Unit Weight:	80 g

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Datasheet

DKR400AB60 Datasheet (PDF)

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CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Fast Recovery Diode Modules

SanRex Fast Recovery Diode Modules are high‑power semiconductor rectifier devices designed for use in industrial power conversion and motor control systems. These SanRex modules are optimized to handle high current and high voltage operation while maintaining fast reverse recovery characteristics, making the devices well-suited for modern high‑frequency switching applications. The modules employ fast recovery or soft recovery diode structures to minimize reverse recovery time and switching losses. This performance characteristic is critical when the diodes are used in conjunction with IGBTs, MOSFETs, and power transistors, where excessive recovery current can increase losses, electromagnetic noise, and device stress. By reducing the reverse recovery charge, these modules help improve overall system efficiency and reliability.