It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TQM110NB04DCR RLG

Name: Taiwan Semiconductor TQM110NB04DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TQM110NB04DCRRLG
Price: 1.65 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

821-TQM110NB04DCRRLG

Mfr. No:

TQM110NB04DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 50A, Dual N-Channel Power MOSFET

Datasheet:

TQM110NB04DCR RLG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Taiwan Semiconductor TQM110NB04DCR RLG

In Stock: 6,006

Stock:: 6,006 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 6006 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.65	$1.65
	$1.60	$16.00
	$1.09	$109.00
	$0.905	$452.50
	$0.797	$797.00
Full Reel (Order in multiples of 2500)
	$0.736	$1,840.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN56U-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	26 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Taiwan Semiconductor
Fall Time:	7 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	TQM110NB04DCR
Unit Weight:	372.608 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TQM110NB04DCR RLG Datasheet

Models

Other

News Release (PDF)

SPICE Models

SPICE Model

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

TQMx Automotive Power MOSFETs

Taiwan Semiconductor TQMx Automotive Power MOSFETs are designed by trench technology for single and dual channels. These P dual channels are compatible with conventional PDFN packages. These MOSFETs feature a flat lead package suitable for compact designs with good thermal performance and a Wettable Flank (WF) for Automated Optical Inspection (AOI). The Taiwan Semiconductor TQMx MOSFET family qualifies for the AEC-Q101 standards to meet the high-performance requirement for automotive applications. These power MOSFETs operate at -55°C to 175°C and are halogen-free according to IEC 61249-2-21. Typical applications include 12V automotive systems, solenoid and motor control, automotive transmission control, and DC-DC converters.