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CSD16407Q5C

Name: Texas Instruments CSD16407Q5C
Brand: Texas Instruments
SKU: 595-CSD16407Q5C
Price: 3.13 USD
Availability: InStock

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See Product Specifications

Mouser No:

595-CSD16407Q5C

Mfr. No:

CSD16407Q5C

Mfr.:

Texas Instruments

Description:

MOSFETs DualCool N-Channel NexFET Power MOSFET

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

CSD16407Q5C Datasheet

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	2.5 mOhms
Vgs - Gate-Source Voltage:	16 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	13.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	9 ns
Forward Transconductance - Min:	111 S
Product Type:	MOSFETs
Rise Time:	18.4 ns
Series:	CSD16407Q5C
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	11.9 ns
Unit Weight:	135.300 mg

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Filter Document:

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Product Catalogs

Power Management Guide 2018 (Rev. R)

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Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.