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CSD25310Q2

Name: Texas Instruments CSD25310Q2
Brand: Texas Instruments
SKU: 595-CSD25310Q2
Price: 0.56 USD
Availability: InStock

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Mouser No:

595-CSD25310Q2

Mfr. No:

CSD25310Q2

Mfr.:

Texas Instruments

Description:

MOSFETs 20-V P-CH NexFET Pwr MOSFET

Datasheet:

CSD25310Q2 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25310Q2

In Stock: 13,930

Stock:: 13,930 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.561	$0.56
	$0.354	$3.54
	$0.237	$23.70
	$0.194	$97.00
	$0.173	$173.00
Full Reel (Order in multiples of 3000)
	$0.147	$441.00
	$0.135	$810.00
	$0.117	$1,053.00
	$0.114	$2,736.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25310Q2T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.55

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	23.9 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	550 mV
Qg - Gate Charge:	3.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.9 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	CSD25310Q2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel Power MOSFET
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	8 ns
Unit Weight:	6 mg

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET P-Channel Power MOSFETs

Texas Instruments NexFET P-Channel Power MOSFETs are designed to deliver the lowest on-resistance and gate charge in a small outline with excellent thermal characteristics in an ultra-low profile. These Texas Instruments NexFET MOSFETs feature ultra-low on-resistance, ultra-low Q_g and Q_gd, and a small footprint of 1.0mm x 1.5mm.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD25310Q2 20V P-Channel NexFET Power MOSFET

Texas Instruments CSD25310Q2 20V P-Channel NexFET Power MOSFET is a 19.9mΩ, –20V P-Channel MOSFET that is designed to deliver the lowest on-resistance and gate charge. This is done in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The CSD25310Q2's low on-resistance coupled with an extremely small footprint in a SON 2mm×2mm plastic package makes the device ideal for battery-operated space-constrained operations.