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CSD86336Q3DT

Name: Texas Instruments CSD86336Q3DT
Brand: Texas Instruments
SKU: 595-CSD86336Q3DT
Price: 2.72 USD
Availability: OutOfStock

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Mouser No:

595-CSD86336Q3DT

Mfr. No:

CSD86336Q3DT

Mfr.:

Texas Instruments

Description:

MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3D

Datasheet:

CSD86336Q3DT Datasheet

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Learn more about Texas Instruments CSD86336Q3DT

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.72	$2.72
	$1.76	$17.60
	$1.07	$107.00
Full Reel (Order in multiples of 250)
	$1.07	$267.50
	$0.926	$463.00
	$0.915	$915.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD86336Q3D

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$2.04

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Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD86336Q3D

Description:

MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3DT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-CLIP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	9.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	3.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	2 ns
Forward Transconductance - Min:	40 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	CSD86336Q3D
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	Power MOSFET
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	5 ns
Unit Weight:	99.500 mg

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Datasheet

CSD86336Q3DT Datasheet

SPICE Models

CSD863336Q3D PSpice Model (Rev. B)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.