LMG3526R030RQST

Texas Instruments
595-LMG3526R030RQST
LMG3526R030RQST

Mfr.:

Description:
Gate Drivers 650-V 30-m? GaN FET with integrated driv

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Texas Instruments LMG3526R030RQST

In Stock: 46

Stock:
46
Can Dispatch Immediately
On Order:
250
Expected 2026/03/04
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$31.69 $31.69
$28.97 $289.70
$27.68 $692.00
$24.76 $2,476.00
Full Reel (Order in multiples of 250)
$23.28 $5,820.00
$22.89 $11,445.00
1,000 Quote
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
SMD/SMT
2.8 ns
22 ns
- 40 C
+ 125 C
LMG3526R030
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 35 mOhms
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG3526R030 GaN FET with Integrated Driver

Texas Instruments LMG3526R030 GaN FET with Integrated Driver comes with protections and targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R030 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.