It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SSM6N43FU,LF

Name: Toshiba SSM6N43FU,LF
Brand: Toshiba
SKU: 757-SSM6N43FULF
Price: 0.37 USD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

757-SSM6N43FULF

Mfr. No:

SSM6N43FU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET

Datasheet:

SSM6N43FU,LF Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba SSM6N43FU,LF

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 5,973

Expected 2026/09/14
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.37	$0.37
	$0.228	$2.28
	$0.143	$14.30
	$0.107	$53.50
	$0.094	$94.00
Full Reel (Order in multiples of 3000)
	$0.076	$228.00
	$0.069	$414.00
	$0.058	$522.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	500 mA
Rds On - Drain-Source Resistance:	460 mOhms, 460 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Qg - Gate Charge:	1.23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	200 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MOSVI
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	TH
Country of Diffusion:	JP
Country of Origin:	TH
Product Type:	MOSFETs
Series:	SSM6N43
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	75 ns, 75 ns
Typical Turn-On Delay Time:	30 ns, 30 ns
Unit Weight:	7.500 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM6N43FU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541210000
CAHTS:: 8542390000
USHTS:: 8541210095
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

π-MOS VI MOSFETs

Toshiba π-MOS VI MOSFETs are Low Voltage Gate Drive devices offered in both P-channel and N-channel polarity and in single- and dual-channel variants. These devices provide a high drain current rating, low capacitance, low on-resistance, and fast switching. The π-MOS VI MOSFETs drive a 2.5V minimum to 20V maximum gate voltage. Toshiba π-MOS VI MOSFETs are offered in CST3-3, ES6-6, SOT-323-3, SOT-346-3, SOT-353-5, SOT-363-6, SOT-416-3, SOT-553-5, SOT-723-3, SOT-883-3, and TO-263MOD-3 package types for design flexibility. These small surface-mounted packages are ideal for high-density applications.