TCR8BM25A,L3F
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See Product Specifications
See Product Specifications
757-TCR8BM25AL3F
TCR8BM25A,L3F
Mfr.:
Description:
LDO Voltage Regulators 800mA LDO, Vout=2.5V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package
LDO Voltage Regulators 800mA LDO, Vout=2.5V, Dropout=170mV, Iq=20uA, PSRR=98dB, in DFN5B package
Datasheet:
In Stock: 9,985
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Stock:
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Pricing (USD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $0.361 | $0.36 | |
| $0.247 | $2.47 | |
| $0.219 | $5.48 | |
| $0.19 | $19.00 | |
| $0.176 | $44.00 | |
| $0.166 | $83.00 | |
| $0.152 | $152.00 | |
| Full Reel (Order in multiples of 5000) | ||
| $0.147 | $735.00 | |
| $0.143 | $1,430.00 | |
Datasheet
Application Notes
- Glossary of CMOS Logic IC Terms
- Impacts of the dv/dt Rate on MOSFETs
- Improving the Load Transient Response of LDOs
- LDO Regulator Application to Power Supplies for High-Frequency Circuits
- LDO Regulator Application to Power Supply Circuits for Digital Cores of CMOS Image Sensors
- LDO Regulator Application to Power Supply Circuits for MCUs
- LDO Regulators Glossary
- Mechanism of LDO Oscillation and Reducing the Susceptibility to Oscillation
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power Efficiency Optimization
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Thermal Design to Maximize the Performance of LDO Regulators
- Tips for Selecting Level Shifters (Voltage Translation ICs)
Models
Product Catalogs
- CAHTS:
- 8542390000
- USHTS:
- 8542390090
- MXHTS:
- 8542399999
- ECCN:
- EAR99
