TK12A60D(STA4,Q,M)

Toshiba
757-TK12A60DSTA4QM
TK12A60D(STA4,Q,M)

Mfr.:

Description:
MOSFETs N-Ch MOS 12A 600V 45W 1800pF 0.55

ECAD Model:
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In Stock: 72

Stock:
72 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.57 $3.57
$1.83 $18.30
$1.54 $154.00
$1.33 $665.00
$1.27 $1,270.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
12 A
550 mOhms
- 30 V, 30 V
2 V
38 nC
- 55 C
+ 150 C
45 W
Enhancement
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK12A60D
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.