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TK6P60W,RVQ

Name: Toshiba TK6P60W,RVQ
Brand: Toshiba
SKU: 757-TK6P60WRVQ
Price: 3.19 USD
Availability: InStock

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Mouser No:

757-TK6P60WRVQ

Mfr. No:

TK6P60W,RVQ

Mfr.:

Toshiba

Description:

MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC

Datasheet:

TK6P60W,RVQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK6P60W,RVQ

In Stock: 5,745

Stock:: 5,745 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.19	$3.19
	$1.33	$13.30
	$1.05	$105.00
Full Reel (Order in multiples of 2000)
	$1.05	$2,100.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	6.2 A
Rds On - Drain-Source Resistance:	820 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Fall Time:	7 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	TK6P60W
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	55 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	330 mg

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Datasheet

TK6P60W,RVQ Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.