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IRFR220PBF

Name: Vishay IRFR220PBF
Brand: Vishay Semiconductors
SKU: 844-IRFR220PBF
Price: 0.78 USD
Availability: InStock

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See Product Specifications

Mouser No:

844-IRFR220PBF

Mfr. No:

IRFR220PBF

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 200V 4.8A N-CH MOSFET

Datasheet:

IRFR220PBF Datasheet

ECAD Model:

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In Stock: 19,673

Stock:: 19,673 Can Dispatch Immediately

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$0.78	$0.78
	$0.49	$4.90
	$0.447	$44.70
	$0.407	$203.50
	$0.341	$341.00
	$0.334	$1,002.00
	$0.329	$1,974.00

Alternative Packaging

Mfr. Part No.:

IRFR220TRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.28

Min:

Mfr. Part No.:

IRFR220TRRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.28

Min:

Mfr. Part No.:

IRFR220PBF-BE3

Packaging:

Bulk

Availability:

In Stock

Price:

$2.11

Min:

Similar Product

Mfr.:

Vishay Semiconductors

Mfr. No:

IRFR220PBF-BE3

Description:

MOSFETs TO252 200V 4.8A N-CH MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	4.8 A
Rds On - Drain-Source Resistance:	800 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	13 ns
Forward Transconductance - Min:	1.7 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	IRFR/U
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	7.2 ns
Unit Weight:	330 mg

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Qualification of ASE as an Additional Assembly Site of DPAK Commercial 
Power Mosfets 

DESCRIPTION OF CHANGE: Vishay Siliconix would like to announce the 
approval of Advanced Semiconductor Engineering (ASE) plant located in 
Weihai, China as an additional assembly facility for DPAK, MOSFET 
devices. 

Please contact a Mouser Technical Sales Representative for further
information.

5-0614-3