FGH75T65SHDTL4

onsemi
512-FGH75T65SHDTL4
FGH75T65SHDTL4

Mfr.:

Description:
IGBTs FS3 TIGBT Excellent switching performan

ECAD Model:
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In Stock: 502

Stock:
502 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$7.40 $7.40
$4.27 $42.70
$3.43 $343.00
$3.30 $1,485.00
$3.22 $2,898.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
TO-247-4
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
150 A
455 W
- 55 C
+ 175 C
FGH75T65SHDTL4
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 150 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Unit Weight: 6.289 g
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Field Stop IGBTs

onsemi Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. onsemi IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs

onsemi FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. onsemi FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.