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FOD8383V

Name: onsemi FOD8383V
Brand: onsemi
SKU: 512-FOD8383V
Price: 2.97 USD
Availability: InStock

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See Product Specifications

Mouser No:

512-FOD8383V

Mfr. No:

FOD8383V

Mfr.:

onsemi

Description:

MOSFET Output Optocouplers FOD8383 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin

Datasheet:

FOD8383V Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi FOD8383V

Availability

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2,000 Can Dispatch in 20 Days

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Minimum: 2000 Multiples: 2000

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.97	$5,940.00
	$2.83	$11,320.00
6,000	Quote

Alternative Packaging

Mfr. Part No.:

FOD8383R2V

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$5.91

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET Output Optocouplers
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	SOP-5
Output Type:	Push-Pull
Number of Channels:	1 Channel
Isolation Voltage:	5000 Vrms
If - Forward Current:	25 mA
Vf - Forward Voltage:	1.43 V
Vr - Reverse Voltage:	5 V
Pd - Power Dissipation:	500 mW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 100 C
Series:	FOD8383
Packaging:	Tube
Brand:	onsemi
Fall Time:	25 ns
Product Type:	MOSFET Output Optocouplers
Rise Time:	35 ns
Factory Pack Quantity:	100
Subcategory:	Optocouplers
Unit Weight:	400 mg

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Datasheet

FOD8383V Datasheet (PDF)

PCN

CNHTS:: 8541490000
CAHTS:: 8541490020
USHTS:: 8541498000
KRHTS:: 8541409029
TARIC:: 8541409000
ECCN:: EAR99

FOD8383/4 High-Speed MOSFET/IGBT Optocouplers

onsemi FOD8383/4 High-Speed MOSFET/IGBT Gate Drive Optocouplers are 2.5A output current gate drive optocouplers that are capable of driving medium-power IGBT/MOSFETs. They are ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications and high-performance power systems. The onsemi FOD8383/4 utilizes Optoplanar® coplanar packaging technology and optimized IC design to achieve reliable high-insulation voltage and high-noise immunity. Each device consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage.