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In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

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NVMFS5C456NLAFT1G-YE

Name: onsemi NVMFS5C456NLAFT1G-YE
Brand: onsemi
SKU: 863-FS5C456NLAFT1GYE
Price: 1.37 USD
Availability: InStock

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Mouser No:

863-FS5C456NLAFT1GYE

Mfr. No:

NVMFS5C456NLAFT1G-YE

Mfr.:

onsemi

Description:

MOSFETs T6 40V NCH LL IN S08FL

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFS5C456NLAFT1G-YE Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFS5C456NLAFT1G-YE

In Stock: 1,199

Stock:: 1,199 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.37	$1.37
	$0.861	$8.61
	$0.569	$56.90
	$0.468	$234.00
	$0.404	$404.00
Full Reel (Order in multiples of 1500)
	$0.369	$553.50
	$0.334	$1,002.00
	$0.321	$2,889.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	87 A
Rds On - Drain-Source Resistance:	3.7 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	55 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	10 ns
Product Type:	MOSFETs
Rise Time:	54 ns
Series:	NVMFS5C456NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

NVMFS5C456NLAFT1G-YE Datasheet

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.