C3M0032120K

Wolfspeed
941-C3M0032120K
C3M0032120K

Mfr.:

Description:
SiC MOSFETs 1.2kV 32mOHMS G3 SiC MOSFET

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
444
Expected 2026/06/05
450
Expected 2026/06/15
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$13.26 $13.26
$8.04 $80.40
$6.92 $830.40

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
63 A
32 mOhms
- 4 V, + 15 V
3.6 V
118 nC
- 40 C
+ 175 C
283 W
Enhancement
Brand: Wolfspeed
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 27 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 18 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 25 ns
Unit Weight: 6 g
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CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

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