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DMN3730UFB-7

Name: Diodes Incorporated DMN3730UFB-7
Brand: Diodes Incorporated
SKU: 522-DMN3730UFB-7
Price: 0.76 USD
Availability: InStock

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See Product Specifications

Mouser No:

522-DMN3730UFB-7

Mfr. No:

DMN3730UFB-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V

Datasheet:

DMN3730UFB-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMN3730UFB-7

In Stock: 2,664

Stock:: 2,664

Can Dispatch Immediately

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On Order:: 3,000

Expected 2026/08/28
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.761	$0.76
	$0.468	$4.68
	$0.301	$30.10
	$0.234	$117.00
	$0.206	$206.00
Full Reel (Order in multiples of 3000)
	$0.167	$501.00
	$0.154	$924.00
	$0.15	$1,350.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X1-DFN1006-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	730 mA
Rds On - Drain-Source Resistance:	460 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	1.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	690 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Forward Transconductance - Min:	40 mS
Product Type:	MOSFETs
Series:	DMN37
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	80 mg

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Datasheet

DMN3730UFB-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

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Diodes Incorporated DMN3730UFB/4 30V N-Channel MOSFETs are designed to minimize on-state resistance (R_DS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Inc DMN3730UFB/4 MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions.

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Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

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