E4MS036120K

Name: Wolfspeed E4MS036120K
Brand: Wolfspeed
SKU: 941-E4MS036120K
Price: 6.97 USD
Availability: OutOfStock

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Mouser No:

941-E4MS036120K

Mfr. No:

E4MS036120K

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 36m, 1200V, TO-247-4, Automotive, Gen4

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

E4MS036120K Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	211 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	Wolfspeed
Configuration:	Single
Fall Time:	4 ns
Forward Transconductance - Min:	20 S
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	3 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channe
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

E4MS036120K Datasheet (PDF)

Compliance Codes

USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V E4MS Discrete SiC MOSFETs

Wolfspeed 1200V E4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for engineers to tune and optimize the performance in the application. The E4MS family provides improved E_on, E_RR, and E_off losses compared to the E3M family of devices, while maintaining a low R_DS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.