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FP35R12N2T7BPSA2

Name: Infineon FP35R12N2T7BPSA2
Brand: Infineon Technologies
SKU: 726-FP35R12N2T7BPSA2
Price: 65.47 USD
Availability: InStock

Mouser No:

726-FP35R12N2T7BPSA2

Mfr. No:

FP35R12N2T7BPSA2

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 35 A PIM IGBT module

Datasheet:

FP35R12N2T7BPSA2 Datasheet (PDF)

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Learn more about Infineon Technologies FP35R12N2T7BPSA2

In Stock: 14

Stock:: 14 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$65.47	$65.47
	$56.80	$568.00
	$51.57	$5,414.85

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	3-Phase Inverter
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.6 V
Continuous Collector Current at 25 C:	35 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Factory Pack Quantity:	15
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FP35R12N2T7 SP005597311 FP35R12N2T7BPSA1

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Datasheet

FP35R12N2T7BPSA2 Datasheet (PDF)

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

1200V PIM 3 Phase Input Rectifiers

Infineon Technologies 1200V PIM 3 Phase Input Rectifiers are EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules. The rectifiers feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with the integration of rectifier and brake chopper enables system cost savings.

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.