It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

GCMX005A120S3B1-N

Name: SemiQ GCMX005A120S3B1-N
Brand: SemiQ
SKU: 148-GCMX005A120S3B1N
Price: 174.07 USD
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX005A120S3B1N

Mfr. No:

GCMX005A120S3B1-N

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V, 5mohm SiC MOSFET Half Bridge Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX005A120S3B1-N Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX005A120S3B1-N

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 15 Multiples: 15

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$174.07	$2,611.05
105	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Package/Case:	S3
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	424 A
Rds On - Drain-Source Resistance:	7 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.531 kW
Series:	GCMX
Packaging:	Bulk
Brand:	SemiQ
Fall Time:	24 ns
Height:	30.9 mm
Length:	106.4 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	18 ns
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Type:	Half Bridge Module
Typical Turn-Off Delay Time:	114 ns
Typical Turn-On Delay Time:	65 ns
Vf - Forward Voltage:	4 V
Width:	61.4 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX005A120S3B1-N Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.

GCMX005A120S3B1-N QSiC™ MOSFET

SemiQ GCMX005A120S3B1-N QSiC™ MOSFET offers enhanced design flexibility and performance in current applications. The QSiC MOSFET operates with near-zero switching loss, increasing efficiency while reducing heat dissipation and the need for large heatsinks. Standing at 26.3mm in height with an industry-standard 62mm footprint, this module addresses the size, weight, and power demands of challenging applications. SemiQ GCMX005A120S3B1-N QSiC MOSFET features a 400A current rating and is suitable for induction heaters, welding equipment, and uninterruptible power supplies (UPS).